| Collector-Emitter Voltage | VCES | | | | 1200 | V |
| Collector Current-continuous (Tc=25) | Ic | | | | 100 | A |
| Collector Current-continuous (Tc=100) | Ic | | | | 50 | A |
| Collector Current-pulse | ICM | (note 1) | | | 200 | A |
| Diode Continuous forward current (Tc=100) | IF | | | | 50 | A |
| Diode Maximum Forward Current | IFM | (Note 1) | | | 200 | A |
| Gate-Emitter Voltage | VGES | | | 20 | | V |
| Short Circuit Withstand Time | tsc | | | 10 | | us |
| Power Dissipation (Tc=25) | PD | | | | 535 | W |
| Power Dissipation (Tc=100) | PD | | | | 267 | W |
| Operating Temperature Range | TJ | | -55 | | +175 | |
| Storage Temperature Range | TSTG | | -55 | | +175 | |
| Maximum Lead Temperature for Soldering | TL | | | | 260 | |
| Collector-Emitter Voltage (Breakdown) | BVCES | IC=500A,VGE=0V | 1200 | | | V |
| Zero Gate Voltage Collector Current | ICES | VCE=1200V,VGE=0V | | | 0.1 | mA |
| Zero Gate Voltage Collector Current (Tc=175) | ICES | VCE=1200V,VGE=0V | | | 2.0 | mA |
| Gate-body leakage current | IGES | VCE=0V,VGE=20V | | | 200 | nA |
| Gate-Emitter Threshold Voltage | VGE(th) | VCE=VGE, lc=250uA | 4.5 | 5.5 | 6.5 | V |
| Collector-Emitter saturation Voltage (Tc=25) | VCESAT | VGE=15V,IC=50A | | | 2.20 | V |
| Collector-Emitter saturation Voltage (Tc=175) | VCESAT | VGE=15V, IC=50A | | | 2.60 | V |
| Input capacitance | Cies | VCE=20V, VGE=0V, f=1.0MHZ, Tc=25 | | 7383 | | pF |
| Output capacitance | Coes | VCE=20V, VGE=0V, f=1.0MHZ, Tc=25 | | 233 | | pF |
| Reverse transfer capacitance | Cres | VCE=20V, VGE=0V, f=1.0MHZ, Tc=25 | | 139 | | pF |
| Total Gate Charge | Qg | VCE=600V,IC=50A, VGE=15V,TC=25C | | 311 | | nC |
| Gate to emitter charge | Qge | VCE=600V,IC=50A, VGE=15V,TC=25C | | 64 | | |
| Gate to collector charge | Qgc | VCE=600V,IC=50A, VGE=15V,TC=25C | | 155 | | |
| Turn-On delay time (Tc=25) | td(on) | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 118 | | ns |
| Turn-On rise time (Tc=25) | tr | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 48 | | ns |
| Turn-off delay time (Tc=25) | td(off) | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 282 | | ns |
| Turn-off Fall time (Tc=25) | tf | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 113 | | ns |
| Turn-on switching loss (Tc=25) | Eon | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 4.40 | | mJ |
| Turn-off switching loss (Tc=25) | Eoff | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 1.40 | | mJ |
| Total switching loss (Tc=25) | Ets | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 5.80 | | mJ |
| Turn-On delay time (Tc=175) | td(on) | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 114 | | ns |
| Turn-On rise time (Tc=175) | tr | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 49 | | ns |
| Turn-off delay time (Tc=175) | td(off) | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 298 | | ns |
| Turn-off Fall time (Tc=175) | tf | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 243 | | ns |
| Turn-on switching loss (Tc=175) | Eon | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 5.65 | | mJ |
| Turn-off switching loss (Tc=175) | Eoff | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 3.26 | | mJ |
| Total switching loss (Tc=175) | Ets | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | | 8.91 | | mJ |
| Diode Forward Voltage (Tc=25) | VF | VGE=0V,IF=50A | | 2.00 | 2.60 | V |
| Diode Forward Voltage (Tc=175) | VF | VGE=0V,IF=50A | | 2.55 | | V |
| Diode Reverse recovery time (Tc=25) | trr | VR=400V,IF=50A dlF/dt=200A/us | | 256 | | ns |
| Diode Reverse recovery charge (Tc=25) | Qrr | VR=400V,IF=50A dlF/dt=200A/us | | 2.7 | | C |
| Diode Reverse recovery Current (Tc=25) | Irrm | VR=400V,IF=50A dlF/dt=200A/us | | 19 | | A |
| Diode Reverse recovery time (Tc=175) | trr | VR=400V,IF=50A dlF/dt=200A/us | | 400 | | ns |
| Diode Reverse recovery charge (Tc=175) | Qrr | VR=400V,IF=50A dlF/dt=200A/us | | 5.75 | | C |
| Diode Reverse recovery Current (Tc=175) | Irrm | VR=400V,IF=50A dlF/dt=200A/us | | 27 | | A |
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | | | | 0.28 | /W |
| Thermal Resistance, Junction to case (Diode) | Rth j-c | | | | 0.5 | /W |
| Thermal Resistance, Junction to Ambient | Rth j-a | | | | 40 | /W |
