| Collector-Emmiter Voltage | Vces | | | 650 | | V | | |
| Collector Current-continuous (T=25) | Ic | | | 40 | | A | | |
| Collector Current-continuous (T=100) | Ic | | | 20 | | A | | |
| Collector Current-pulse | ICM | | | 80 | | A | | |
| Diode RMS forward current (T=25) | IF | | | 40 | | A | | |
| Diode RMS forward current (T=100) | IF | | | 20 | | A | | |
| Gate-Emmiter Voltage | VGES | | | 20 | | V | | |
| Turn-off safe area | | | -180 | | | A | | |
| Surge non repetitive forward current | IFSM | tp=10ms sinusoidal | | 80 | | A | | |
| Power Dissipation | PD | TC=25 | | 162 | | W | ✔ | |
| Power Dissipation | PD | TC=25 | | 46 | | W | | ✔ |
| Diode Forward Current | | TC=100 | | 20 | | A | | |
| Operating and Storage Temperature Range | TJ,TSTG | | -55 | | +150 | | | |
| Maximum Lead Temperature for Soldering Purposes | TL | | | 300 | | | | |
| Collector-Emmiter Voltage | BVCES | IC=500A,VGE=0V | 650 | - | - | V | | |
| IGBT Breakdown Voltage Temperature Coefficient | BVCES/TJ | IC=1mA,referenced to 25 | - | 0.5 | - | V/ | | |
| Zero Gate Voltage Collector Current | ICES | VCE=650V,VGE=0 V,TC=25 | - | 10 | | A | | |
| Gate-body leakage current | IGESF | VCE=0V,VGE= 20V | - | - | 200 | nA | | |
| Gate-Emmiter Threshold Voltage | VGE(th) | VCE=VGE, lc=250uA | 4.5 | - | 6.5 | V | | |
| Collector-Emmiter saturation Voltage | VCESAT | VGE=15V,IC=20A, TC=25 | - | 1.6 | 2.0 | V | | |
| Collector-Emmiter saturation Voltage | VCESAT | Tc=125 | | 1.75 | 2.15 | V | | |
| Collector-Emmiter saturation Voltage | VCESAT | TC=175 | | 1.9 | 2.3 | V | | |
| Short Collector current | Ic(sc) | VGE=15V VCE=360V tsc< 10us Tc=25 | | 116.7 | | A | | |
| Input capacitance | Cies | VCE=25V, VGE=0V, f=1.0MHZ, Tc=25 | - | 1500 | - | pF | | |
| Output capacitance | Coes | | - | 128 | - | pF | | |
| Reverse transfer capacitance | Cres | | - | 28.7 | - | pF | | |
| Turn-On delay time | td(on) | VCE=400V,Ic=20A ,RG=10,VGE=15 V Tc=25 Inductive Load | - | 16 | - | ns | | |
| Turn-On rise time | tr | | - | 56 | - | ns | | |
| Turn-off delay time | td(off) | | - | 52 | - | ns | | |
| Turn-off Fall time | tf | | - | 82 | - | ns | | |
| Turn-on energy | Eon | | - | 0.79 | - | mJ | | |
| Turn-off energy | Eoff | | - | 0.3 | - | mJ | | |
| Total switching Energy | Etotal | | - | 1.09 | - | mJ | | |
| Total Gate Charge | Qg | VCE=400V,Ic=20 ARG=10,VGE=1 5V | - | 43.9 | - | nC | | |
| Diode Forward Voltage | VF | VGE=0V,IF=20A. TC=25 | - | 1.4 | - | V | | |
| Diode Forward Voltage | VF | VGE=0V,IF=20A. TC=175 | - | 1.0 | - | V | | |
| Diode Reverse recovery time | trr | VGE=0V, IF=20A dl=/dt=100A/us | - | 254 | - | ns | | |
| Reverse recovery charge | Qrr | | - | 347 | - | uC | | |
| Diode Reverse recovery Current | Irrm | | - | 2.7 | - | A | | |
| IGBT Thermal Resistance,Junction to Case | Rth(j-c) | | | 0.77 | | /W | ✔ | |
| FRD Thermal Resistance,Junction to Case | Rth(j-c) | | | 2.05 | | /W | | ✔ |
| Thermal Resistance,Junction to Ambitent | Rth(j-A) | | | 33.8 | | /W | | |
