| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|
| Collector-emitter breakdown voltage | BVces | Ic = 2mA, Ve = 0V | 650 | - | - | V |
| Collector-emitter saturation voltage | Vce(sat) | Ic = 40A, Vee = 15V, Tj= 25C | - | 1.95 | 2.4 | V |
| Collector-emitter saturation voltage | Vce(sat) | Ic = 40A, Vee = 15V, Tj= 175C | - | 2.3 | - | V |
| Diode forward voltage | VF | Vee =0V, IF=20A, Tj=25C | 1.3 | 1.9 | - | V |
| Diode forward voltage | VF | Vee =0V, IF=20A, Tj=125C | 1.15 | - | - | V |
| Diode forward voltage | VF | Vee =0V, IF=20A, Tj=175C | 1.1 | - | - | V |
| Gate-emitter threshold voltage | Vge(th) | Ve = Vge, Ic = 0.58mA | 4.0 | 5.0 | 6.0 | V |
| Zero gate voltage collector current | Ices | Vee = 650V, Tj=25C | - | - | 40 | uA |
| Zero gate voltage collector current | Ices | Vee = 650V, Tj=175C | - | - | 1000 | pA |
| Gate-emitter leakage current | Iges | Vee = 20V, Vce = 0V | - | - | ±100 | nA |
| Transconductance | gfs | Vee =20V, Ic = 40A, Tj=25C | 17.0 | - | - | S |
| Total gate charge | Qg | Ic = 40A, Vee = 15V | - | 219 | - | nC |
| Gate-emitter charge | Qge | Ic = 40A, Vee = 15V | - | 26 | - | nC |
| Gate-collector charge | Qgc | Ic = 40A, Vee = 15V | - | 115 | - | nC |
| Input capacitance | Cies | Vee =0V, f=1MHz | - | 2818 | - | pF |
| Reverse transfer capacitance | Cres | Vee =0V, f=1MHz | - | 131 | - | pF |
| Output capacitance | Coes | Vee =0V, f=1MHz | - | 209 | - | pF |
| Internal emitter inductance | Le | measured 5mm from case | - | 13.0 | - | nH |
| Short circuit collector current | Iesc | Voe ≥ 10, Vee = 800V | - | 180 | - | A |
| Turn-on delay time | td(on) | Vee = 15V, Ve = 400V, Ic = 40A, Re =7.9Ω | - | 58 | - | ns |
| Rise time | tr | Vee = 15V, Ve = 400V, Ic = 40A, Re =7.9Ω | - | 54 | - | ns |
| Turn-off delay time | td(off) | Vee = 15V, Ve = 400V, Ic = 40A, Re =7.9Ω | - | 245 | - | ns |
| Fall time | tf | Vee = 15V, Ve = 400V, Ic = 40A, Re =7.9Ω | - | 40 | - | ns |
| Turn-on switching energy | Eon | Inductive Load, Tj = 25C | - | 1.15 | - | mJ |
| Turn-off switching energy | Eoff | Inductive Load, Tj = 25C | - | 0.35 | - | mJ |
| Total switching energy | Ets | Inductive Load, Tj = 25C | - | 1.50 | - | mJ |
| Reverse recovery time | trr | IF = 20A, die/dt = 1000A/μs, Tj = 25C | - | 80 | - | ns |
| Reverse recovery current | Irr | IF = 20A, die/dt = 1000A/μs, Tj = 25C | - | 25 | - | A |
| Reverse recovery charge | Qrr | IF = 20A, die/dt = 1000A/μs, Tj = 25C | - | 1.0 | - | μC |
| Rate of fall of reverse recovery current | di/dt | IF = 20A, Tj = 25C | - | 950 | - | A/μs |
