| Collector-Emmiter Voltage | Vces | | | | 650 | V |
| Collector Current-continuous (Tc=25) | Ic | | | | 40 | A |
| Collector Current-continuous (Tc=100) | Ic | | | | 20 | A |
| Collector Current-pulse | ICM | (note 1) | | | 80 | A |
| Diode RMS forward current (T=25) | IF | | | | 40 | A |
| Diode RMS forward current (T=100) | IF | | | | 20 | A |
| Gate-Emmiter Voltage | VGES | | | | 20 | V |
| Surge non repetitive forward current | IFSM | tp=10ms sinusoidal | | | 80 | A |
| Power Dissipation (TC=25) | PD | | | | 35 | W |
| Power Dissipation (TC=100) | PD | | | | 156 | W |
| Power Dissipation (TC=175) | PD | | | | 162 | W |
| Diode Forward Current (TC=100) | PD | | | | 20 | A |
| Storage Temperature Range | TSTG | | -55 | | +150 | |
| Operating Temperature Range | TJ | | -55 | | +175 | |
| Maximum Lead Temperature for Soldering Purposes | TL | | | | 300 | |
| Collector-Emmiter Voltage Breakdown | BVCES | IC=500A,VGE=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVCES/TJ | IC=1mA,referenced to 25 | - | 0.5 | - | V/ |
| Zero Gate Voltage Collector Current | ICES | VCE=650V,VGE=0V, TC=25 | - | 10 | - | A |
| Gate-body leakage current | IGES | VCE=0V,VGE=20V | - | - | 200 | nA |
| Gate-Emmiter Threshold Voltage | VGE(th) | VCE=VGE, lc=250uA | 4.5 | - | 6.5 | V |
| Collector-Emmiter saturation Voltage (TC=25) | VCESAT | VGE=15V,IC=20A | - | 1.6 | 2.0 | V |
| Collector-Emmiter saturation Voltage (TC=125) | VCESAT | VGE=15V,IC=20A | - | 1.75 | 2.15 | V |
| Collector-Emmiter saturation Voltage (TC=175) | VCESAT | VGE=15V,IC=20A | - | 1.9 | 2.3 | V |
| Short Collector current | Ic(sc) | VGE=15V, VCE=360V, tsc< 10us, Tc<=25 | - | 116.7 | - | A |
| Input capacitance | Cies | VCE=25V, VGE=0V, f=1.0MHZ, Tc=25 | - | 1500 | - | pF |
| Output capacitance | Coes | VCE=25V, VGE=0V, f=1.0MHZ, Tc=25 | - | 128 | - | pF |
| Reverse transfer capacitance | Cres | VCE=25V, VGE=0V, f=1.0MHZ, Tc=25 | - | 28.7 | - | pF |
| Turn-On delay time (Tc=25) | td(on) | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 16 | - | ns |
| Turn-On rise time (Tc=25) | tr | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 56 | - | ns |
| Turn-off delay time (Tc=25) | td(off) | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 52 | - | ns |
| Turn-off Fall time (Tc=25) | tf | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 82 | - | ns |
| Turn-on energy (Tc=25) | Eon | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 0.79 | - | mJ |
| Turn-off energy (Tc=25) | Eoff | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 0.3 | - | mJ |
| Total switching Energy (Tc=25) | Etotal | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 1.09 | - | mJ |
| Turn-On delay time (Tc=175) | td(on) | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 14 | - | ns |
| Turn-On rise time (Tc=175) | tr | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 54 | - | ns |
| Turn-off delay time (Tc=175) | td(off) | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 76 | - | ns |
| Turn-off Fall time (Tc=175) | tf | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 146 | - | ns |
| Turn-on energy (Tc=175) | Eon | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 0.8 | - | mJ |
| Turn-off energy (Tc=175) | Eoff | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 0.49 | - | mJ |
| Total switching Energy (Tc=175) | Etotal | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | - | 1.3 | - | mJ |
| Total Gate Charge | Qg | VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4) | - | 43.9 | - | nC |
| Gate to emitter charge | Qge | VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4) | - | 10.0 | - | |
| Gate to collector charge | Qgc | VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4) | - | 18.9 | - | |
| Gate resistance | Rg | f=1MHz,open collector | - | 1.8 | - | |
| Diode Forward Voltage (TC=25) | VF | VGE=0V,IF=20A | - | 1.4 | - | V |
| Diode Forward Voltage (TC=125) | VF | VGE=0V,IF=20A | - | 1.2 | - | V |
| Diode Forward Voltage (TC=175) | VF | VGE=0V,IF=20A | - | 1.0 | - | V |
| Diode Reverse recovery time (TC=25) | trr | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | - | 254 | - | ns |
| Reverse recovery charge (TC=25) | Qrr | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | - | 347 | - | nC |
| Diode Reverse recovery Current (TC=25) | Irrm | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | - | 2.7 | - | A |
| Diode Reverse recovery time (TC=175) | trr | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | - | 429 | - | ns |
| Reverse recovery charge (TC=175) | Qrr | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | - | 1010 | - | nC |
| Diode Reverse recovery Current (TC=175) | Irrm | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | - | 4 | - | A |
| IGBT Thermal Resistance, Junction to Case | Rth(j-c) | | | 0.77 | 3.57 | /W |
| FRD Thermal Resistance, Junction to Case | Rth(j-c) | | | 2.05 | 7.7 | /W |
| Thermal Resistance, Junction to Ambitent | Rth(j-A) | | | 33.8 | 62.5 | /W |
