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    Buy cheap Slkor MMUN2212 from wholesalers
     
    Buy cheap Slkor MMUN2212 from wholesalers
    • Buy cheap Slkor MMUN2212 from wholesalers

    Slkor MMUN2212

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    Model Number : MMUN2212
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    Slkor MMUN2212

    Product Overview

    This series of digital transistors (Bias Resistor Transistors - BRT) integrates a single NPN silicon transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. This integration eliminates the need for external discrete components, reducing system cost and board space. The BRT is housed in a SOT-23 package, suitable for low-power surface mount applications. The modified gull-winged leads are designed to absorb thermal stress during soldering, preventing damage to the die. Available in 8 mm embossed tape and reel packaging.

    Advantages:

    • Simplifies Circuit Design
    • Reduces Board Space and Component Count
    • Eliminates external bias resistors

    Application:

    Low power surface mount applications.

    Package Type

    SOT-23

    Transistor Type

    NPN Silicon

    Mounting Type

    Surface Mount

    Packaging

    8 mm embossed tape and reel
    Device MarkingR1 (k)R2 (k)Collector-Emitter Breakdown Voltage (V(BR)CEO)DC Current Gain (hFE)Collector-Emitter Saturation Voltage (VCE(sat))Input Resistor (R1)
    MMUN2211 / A8A101050 Vdc35 - 1000.25 Vdc7.0 k
    MMUN2212 / A8B222250 Vdc60 - 1400.25 Vdc15.4 k
    MMUN2213 / A8C474750 Vdc80 - 1400.25 Vdc32.9 k
    MMUN2214 / A8D104750 Vdc80 - 3500.25 Vdc7.0 k
    MMUN2215 / A8E1050 Vdc160 - 3500.25 Vdc7.0 k
    MMUN2216 / A8F4.750 Vdc160 - 3500.25 Vdc3.3 k
    MMUN2230 / A8G1.01.050 Vdc3.0 - 5.00.25 Vdc0.7 k
    MMUN2231 / A8H2.22.250 Vdc8.0 - 150.25 Vdc1.5 k
    MMUN2232 / A8J4.74.750 Vdc15 - 300.25 Vdc3.3 k
    MMUN2233 / A8K4.74750 Vdc80 - 2000.25 Vdc3.3 k
    MMUN2234 / A8L224750 Vdc80 - 1500.25 Vdc15.4 k
    MMUN2235 / A8M2.24750 Vdc80 - 1400.25 Vdc2.2 k
    MMUN2238 / A8R2.250 Vdc160 - 3500.25 Vdc2.2 k
    MMUN2241 / A8U10050 Vdc160 - 3500.25 Vdc70 k
    CharacteristicSymbolMinTypMaxUnitCondition
    Collector-Base Cutoff CurrentICBO100nAdcVCB = 50 V, IE = 0
    Collector-Emitter Cutoff CurrentICEO500nAdcVCE = 50 V, IB = 0
    Emitter-Base Cutoff CurrentIEBO0.5mAdcVEB = 6.0 V, IC = 0
    Collector-Base Breakdown VoltageV(BR)CBO50VdcIC = 10 A, IE = 0
    Collector-Emitter Breakdown VoltageV(BR)CEO50VdcIC = 2.0 mA, IB = 0 (Note 2.)
    Collector-Emitter Saturation VoltageVCE(sat)0.25VdcIC = 10 mA, IB = 0.3 mA
    Total Power DissipationPD200mW@ TA = 25C (Note 1.)
    Thermal Resistance Junction-to-AmbientRJA625C/W(surface mounted)
    Operating and Storage Temperature RangeTJ, Tstg65150C
    Maximum Temperature for SolderingTL260CSec (Time in Solder Bath)

    2410151050_Slkor-MMUN2212_C41428768.pdf
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