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Low voltage drop transistor Slkor 2SC5585 featuring high current capability for power electronics

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Low voltage drop transistor Slkor 2SC5585 featuring high current capability for power electronics

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Model Number :	2SC5585

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Low voltage drop transistor Slkor 2SC5585 featuring high current capability for power electronics

Product Overview

This NPN transistor offers high current capability with a low VCE(sat) of 250mV at IC = 200mA / IB = 10mA. It is suitable for applications requiring efficient power handling and low voltage drop. The transistor is available in a SOT-523 package.

Product Attributes

Marking: BX
Package Type: SOT-523 Plastic-Encapsulate Transistors

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=10A, IE=0			15	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0			12	V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0			6	V
Collector cut-off current	ICBO	VCB=15 V, IE=0		0.1	A
Emitter cut-off current	IEBO	VEB=6V, IC=0		0.1	A
DC current gain	hFE	VCE=2V, IC=10mA	270		680
Collector-emitter saturation voltage	VCE(sat)	IC=200mA,IB=10mA		0.25	V
Transition frequency	fT	VCE=2V,IC=10mA, f=100MHz		320	MHz
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz		7.5	pF

Parameter	Symbol	Value	Unit
Collector- Base Voltage	VCBO	15	V
Collector-Emitter Voltage	VCEO	12	V
Emitter-Base Voltage	VEBO	6	V
Collector Current -Continuous	IC	0.5	A
Collector Power Dissipation	PC	0.15	W
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55-150

Pin	Name
1	BASE
2	EMITTER
3	COLLECTOR

2508051530_Slkor-2SC5585_C50087593.pdf

Low voltage drop transistor Slkor 2SC5585 featuring high current capability for power electronics

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