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N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits

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N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits

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Model Number :	BF256B

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N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits

ON Semiconductor BF256B N-Channel RF Amplifiers

The BF256B is an N-Channel RF Amplifier designed for VHF/UHF applications. Sourced from process 50, this device offers reliable performance for amplifier circuits.

Product Attributes

Brand: ON Semiconductor (formerly Fairchild Semiconductor)
Product Type: N-Channel RF Amplifier
Part Number: BF256B
Top Mark: BF256B
Package: TO-92 3L
Origin: Sourced from process 50

Technical Specifications

Parameter	Conditions	Min.	Max.	Unit
Gate-Source Breakdown Voltage (V(BR)GSS)	VDS = 0, IG = 1 A		-30	V
Gate-Source Voltage (VGS)	VDS = 15 V, ID = 200 A	-0.5	-7.5	V
Gate-Source Cut-Off Voltage (VGS(off))	VDS = 15 V, ID = 10 nA	-0.5	-8.0	V
Gate Reverse Current (IGSS)	VGS = -20 V, VDS = 0		-5	nA
Zero-Gate Voltage Drain Current (IDSS)	VDS = 15 V, VGS = 0	6	13	mA
Common Source Forward Transconductance (gfs)	VDS = 15 V, VGS = 0, f= 1 kHz	4.5		mmhos
Drain-Gate Voltage (VDG)			30	V
Gate-Source Voltage (VGS)			-30	V
Forward Gate Current (IGF)			10	mA
Operating and Storage Temperature Range (TJ, TSTG)		-55	150	C
Total Device Dissipation (PD) at TA = 25C			350	mW
Derate Above 25C			2.8	mW/C

Note: Part numbers containing underscores (_) from Fairchild may have been updated to dashes (-) to comply with ON Semiconductor's system requirements. Please verify updated device numbers on the ON Semiconductor website.

2411272026_onsemi-BF256B_C2892081.pdf

N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits

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