Product Overview

The DT1T Series TRIACs are sensitive gate, silicon bidirectional thyristors designed for high commutation performance without the need for a snubber circuit. These devices are compatible with logic-level inputs, making them suitable for a wide range of applications including general purpose motor control, small loads in fan control, solenoid drivers, LED dimming, and digital control drivers. They feature passivated dice for enhanced reliability and uniformity, and are available in TO-92 and SOT-223 packages. The series offers over 1000V/800V VDRM/VRRM ratings and low level triggering and holding characteristics.

Product Attributes

• Brand: DOESHARE
• Series: DT1T Series TRIACs
• Type: Silicon Bidirectional Thyristors (TRIACs)
• Gate Sensitivity: Sensitive gate for third quadrant
• Commutation Performance: High commutation performance without snubber circuit
• Triggering: Logic level input compatible, Three-quadrant triggering
• Die: Passivated die for reliability and uniformity
• Environmental Compliance: "Green" molding compound, UL flammability classification 94V-0, Lead free in RoHS II 2015/863/EU compliant
• Moisture Sensitivity: Meets industry standard IPC/JEDEC J-STD-020
• Available Packages: TO-92, SOT-223

Technical Specifications

Parameter	Symbol	DT1T5X	DT1T10X	Unit	Conditions	Notes
Peak repetitive off-state voltage	VDRM / VRRM	800 / 1000	800 / 1000	V	Tj = -40 to 125C, Full sine wave, 50 to 60 Hz; Gate open	(1)
On-stage RMS current	IT(RMS)	1	1	A	Full sine wave, TC = 60C
Peak non-repetitive surge current	ITSM	9	9	A	One full cycle 60 HZ, Tj = 25C
Circuit fusing consideration	I2T	0.6	0.6	AS	t = 8.3ms
Operating junction temperature range	Tj	-40 to +125	-40 to +125	C
Storage temperature range	TSTG	-40 to +150	-40 to +150	C
Thermal resistance (junction to ambient, DC)	Rth(j-a)	50 (TO-92) / 25 (SOT-223)	50 (TO-92) / 25 (SOT-223)	C/W	Without Heatsink	(1)
Maximum lead temperature for soldering	TL	260	260	C	1/8 form case for 10 seconds	(1)
Threshold Voltage	Vto	--	1.1	V	Tj = 125C	MAX
Dynamic resistors	Rd	--	500	m	Tj = 125C	MAX
Peak repetitive forward or reverse blocking current	IDRM / IRRM	--	5 (Tj=25C) / 0.5 (Tj=125C)	uA / mA	VAK = rated VDRM and VRRM, gate open
Peak forward on-state voltage	VTM	1.56	1.56	V	ITM = 1.4 A @ Tj = 25C	MAX
Gate trigger voltage	VGT	1	1	V	VAK = 12V, RL=100	MAX
Gate trigger current	IGT	5 / 10	5 / 10	mA	VAK = 12V, RL=100	(1,2,3)
Holding current	IH	5 / 10	5 / 10	mA	VAK = 12V, RL=100	(1,3)
Latching current	IL	10 / 20 / 25	10 / 20 / 25	mA	VAK = 12V, RL=100	(1,2,3)
Critical rate of rise of off-stage voltage	dv/dt	200	600	V/us	VAK = 67% rated VDRM , Tj = 125C, gate open	MAX
Critical rate of rise of on-state current (snubberless)	di/dt(s)	15	50	A/us	VDRM=maximum VDRM ,Tj = 125C	MAX
Critical rate of rise of on-state current (with snubber)	di/dt(c)	0.3	1	A/ms	Tj=125C, gate open, Without Snubber	MAX

Note 1: Without Heatsink

Note: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2410121457_Doeshare-DT1T5G-B_C919178.pdf