| IGBT-inverter | Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 15 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 30 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V |
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 130 | W |
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =0.5mA,Tvj=25 | 5.2 - 6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=15A,VGE=15V, Tvj=25 | 1.9 - 2.5 | V |
| Gate Charge | QG | | 0.15 | uC |
| Input Capacitance | Cies | VCE=25V, VGE =0V, f=1MHz, Tvj=25 | 0.98 | nF |
| Reverse Transfer Capacitance | Cres | | 0.034 | nF |
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V, Tvj = 25 | 400 | nA |
| Short Circuit Data | ISC | tp10us,VGE=15V,Tvj=150, VCC=900V,VCEM1200V | 55 | A |
| Diode-inverter | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | | 15 | A |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 30 | A |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 16.0 | A2s |
| Forward Voltage | VF | IF=15A,Tvj=25 | 2.00 - 2.80 | V |
| Recovered Charge | Qrr | IF=15A VR=600V -diF/dt =600A/us Tvj=25 | 0.45 | uC |
| Peak Reverse Recovery Current | Irr | IF=15A VR=600V -diF/dt =600A/us Tvj=25 | 13 | A |
| Reverse Recovery Energy | Erec | IF=15A VR=600V -diF/dt =600A/us Tvj=25 | 0.49 | mJ |
| Recovered Charge | Qrr | IF=15A VR=600V -diF/dt =600A/us Tvj=150 | 0.54 | uC |
| IGBT-brake-chopper | Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 15 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 30 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V |
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 130 | W |
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =0.5mA,Tvj=25 | 5.2 - 6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=15A,VGE=15V, Tvj=25 | 1.9 - 2.5 | V |
| Gate Charge | QG | | 0.09 | uC |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz, Tvj=25 | 0.98 | nF |
| Reverse Transfer Capacitance | Cres | | 0.034 | nF |
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj = 25 | 400 | nA |
| Short Circuit Data | ISC | tp10us,VGE=15V,Tvj=150, VCC=900V,VCEM1200V | 55 | A |
| Diode-brake-chopper | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | | 10 | A |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 20 | A |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 16.0 | A2s |
| Forward Voltage | VF | IF=10A,Tvj=25 | 2.00 - 2.80 | V |
| Recovered Charge | Qrr | IF=10A VR=600V -diF/dt =500A/us Tvj=25 | 0.26 | uC |
| Peak Reverse Recovery Current | Irr | IF=10A VR=600V -diF/dt =500A/us Tvj=25 | 11 | A |
| Reverse Recovery Energy | Erec | IF=10A VR=600V -diF/dt =500A/us Tvj=25 | 0.25 | mJ |
| Recovered Charge | Qrr | IF=10A VR=600V -diF/dt =500A/us Tvj=150 | 0.49 | uC |
| Diode-rectifier | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1600 | V |
| Average output Current | IF(AV) | 50/60Hz, sine wave TC=100 | 20 | A |
| Maximum RMS Current at Rectifier Output | IRMSM | TC=100 | 40 | A |
| Surge Forward Current | IFSM | VR=0V,tp=10ms,Tvj=25 | 330 | A |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=25 | 520 | A2s |
| Diode Forward Voltage | VF | IF=15A,Tvj=150 | 0.96 | V |
| Reverse Current | IR | Tvj=150,VR=1600V | 1.0 | mA |
| NTC-thermistor | Rated Resistance | R25 | | 5.0 | k |
| Deviation of R100 | R/R | TC=100,R100=493.3 | -5 - 5 | % |
| Power Dissipation | P25 | | 20.0 | mW |
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298.15 K))] | 3375 | K |
| Module Characteristics | Isolation Voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | | 175 | |
| Operating Junction Temperature | Tvj op | | -40 - 150 | |
| Storage Temperature | Tstg | | -40 - 125 | |
| Stray-inductance-module | LSCE | | 30 | nH |
| Module lead resistance, terminals-chip | RCC+EE | TC=25, per switch | 8.00 | m |
| Module lead resistance, terminals-chip | RAA+CC | | 6.00 | m |
| Thermal Resistance Junction-to Case | RJC | per IGBT-inverter | 1.15 | K/W |
| Thermal Resistance Case-to Sink | RCS | per IGBT-inverter | 0.95 | K/W |
| Mounting Force Per Clamp | F | | 20 - 50 | N |
| Weight of Module | G | | 25 | g |
