| Absolute Maximum Ratings |
| Collector-Emitter Voltage | VCES | | 1700 | V |
| Gate-Emitter Voltage | VGES | | ±20 | V |
| DC Collector Current | IC | Tc=100 | 450 | A |
| Peak Collector Current | ICM | tp=1ms | 900 | A |
| Continuous Diode Forward Current | IF | | 450 | A |
| Diode Peak Forward Current | IFRM | tp=1ms | 900 | A |
| IGBT Maximum Power Dissipation | PD | | 2500 | W |
| IGBT Short Circuit Withstand Time | tsc | | 10 | μs |
| Maximum Junction Temperature | TvJ MAX | | 175 | °C |
| Operating Junction Temperature | TvJ | | -40 to 150 | °C |
| Storage Temperature | TSTG | | -40 to 125 | °C |
| Maximum lead temperature for soldering | TL | | 260 | °C |
| Electrical Characteristics (IGBT) |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=450A,VGE=15V, Tvj=25 | 1.80 | V |
| | Tvj=125 | 2.20 | V |
| | Tvj=150 | 2.30 | V |
| Gate-Emitter Threshold Voltage | VGE(th) | IC=18mA, VCE=VGE | 5.2 - 6.4 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1700V, VGE=0V | 3 | mA |
| Gate-Emitter Leakage Current | IGES | VCE=0V, VGE=±20V | -400 - 400 | nA |
| Internal Gate Resistance | RGint | Tvj=25 | 1.57 | Ω |
| Gate Charge | QG | VGE=-15V~+15V | 5.2 | μC |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz | 60.0 | nF |
| Reverse Transfer Capacitance | Cres | | 0.7 | nF |
| Turn-on Delay Time | td(on) | IC=450A, VCE=900V, VGE=±15V, RGon=3.3Ω, RGoff=3.3Ω, Inductive Load,
Tvj=25 | 260 | ns |
| | Tvj=125 | 280 | ns |
| | Tvj=150 | 280 | ns |
| Rise Time | tr | Tvj=25 | 140 | ns |
| | Tvj=125 | 160 | ns |
| | Tvj=150 | 160 | ns |
| Turn-off Delay Time | td(off) | IC=450A, VCE=900V, VGE=±15V, RGon=3.3Ω, RGoff=3.3Ω, Inductive Load,
Tvj=25 | 640 | ns |
| | Tvj=125 | 700 | ns |
| | Tvj=150 | 715 | ns |
| Fall Time | tf | IC=450A, VCE=900V, VGE=±15V, RGon=3.3Ω, RGoff=3.3Ω, Inductive Load,
Tvj=25 | 405 | ns |
| | Tvj=125 | 590 | ns |
| | Tvj=150 | 595 | ns |
| Turn-on Energy Loss | Eon | Tvj=25 | 75 | mJ |
| | Tvj=125 | 110 | mJ |
| | Tvj=150 | 130 | mJ |
| Turn-off Energy Loss | Eoff | Tvj=25 | 105 | mJ |
| | Tvj=125 | 130 | mJ |
| | Tvj=150 | 140 | mJ |
| Short Circuit Current | ISC | VGE≤15V, tp≤10us, VCC=1000V, Tvj=150 | 2300 | A |
| Electrical Characteristics (Diode) |
| Forward Voltage | VF | IF=450A, Tvj=25 | 2.00 | V |
| | Tvj=125 | 2.20 | V |
| | Tvj=150 | 2.20 | V |
| Reverse Recovery Current | Irr | IF=450A, VR=900V, VGE=-15V, diF/dt=-2800A/μs, Tvj=25 | 245 | A |
| | Tvj=125 | 265 | A |
| | Tvj=150 | 280 | A |
| Reverse Recovery Charge | Qrr | Tvj=25 | 60 | μC |
| | Tvj=125 | 100 | μC |
| | Tvj=150 | 120 | μC |
| Reverse Recovery Energy Loss | Erec | Tvj=25 | 40 | mJ |
| | Tvj=125 | 60 | mJ |
| | Tvj=150 | 70 | mJ |
| NTC-Thermistor |
| Rated resistance | R25 | Tc=25 | 5.00 | KΩ |
| Power dissipation | P25 | | 10 | mW |
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298,15K))] | 3380 | K |
| Package Properties |
| IGBT Thermal Resistance: Junction to Case | Rth(J-C) | per IGBT | 0.060 | K/W |
| Diode Thermal Resistance: Junction to Case | Rth(J-C) | per Diode | 0.100 | K/W |
| IGBT Thermal Resistance: Case to Heatsink | Rth(C-H) | per IGBT, λgrease=1W/(m•K) | 0.029 | K/W |
| Diode Thermal Resistance: Case to Heatsink | Rth(C-H) | per Diode, λgrease=1W/(m•K) | 0.048 | K/W |
| Isolation Voltage | Visol | RMS, f=50Hz, t=60s | 3.4 | kV |
| Creepage Distance | dcr | Terminal to Heatsink | 14 | mm |
| | Terminal to Terminal | 13.5 | mm |
| Clearance Distance | dcl | Terminal to Heatsink | 12.5 | mm |
| | Terminal to Terminal | 10 | mm |
| Comparative Tracking Index | CTI | | >200 | |
| Module Stray Inductance | Ls | CE per Switch | 20 | nH |
| Module lead Resistance | RCC`+EE` | per Switch, TC=25 | 1.1 | mΩ |
| Mounting Torques | M | Baseplate to Heatsink, M5 | 3.0 - 6.0 | Nm |
| | Power Terminal, M6 | 3.0 - 6.0 | Nm |
| Module Weight | G | | 345 | g |
