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Schottky diode JSCJ SD101CW featuring guard ring construction low forward voltage and fast switching

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Schottky diode JSCJ SD101CW featuring guard ring construction low forward voltage and fast switching

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Model Number :	SD101CW

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Schottky diode JSCJ SD101CW featuring guard ring construction low forward voltage and fast switching

Product Overview

The SD101CW is a Schottky Barrier Diode in a SOD-123 plastic-encapsulated package. It features a low forward voltage drop, guard ring construction for transient protection, and negligible reverse recovery time, making it suitable for various electronic applications.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Package Type: SOD-123
Marking: S3

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Peak Repetitive Peak Reverse Voltage	VRRM	40	V
Working Peak Reverse Voltage	VRWM	40	V
DC Blocking Voltage	VR	40	V
RMS Reverse Voltage	VR(RMS)	28	V
Forward Continuous Current	IFM	15	mA	@Ta=25
Non-Repetitive Peak Forward Surge Current	IFSM	2.0	A	@t=8.3ms
Power Dissipation	Pd	400	mW	@Ta=25
Thermal Resistance Junction to Ambient	RJA	250	/W
Reverse breakdown voltage	VR	40	V	IR=10A
Forward voltage	VF	0.39	V	IF=1.0mA
Forward voltage	VF	0.90	V	IF=15mA
Reverse current	IR	0.2	A	VR=30V
Capacitance between terminals	CT	2.2	pF	VR=0V,f=1.0MHz
Reverse recovery time	trr	1.0	ns	IF=IR=5mA Irr=0.1XIR,RL=100
Storage Temperature	TSTG	-55~+150
Junction temperature	Tj	125

2410121234_JSCJ-SD101CW_C77354.pdf

Schottky diode JSCJ SD101CW featuring guard ring construction low forward voltage and fast switching

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