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Schottky barrier diode JSCJ SD103CWS featuring low reverse capacitance and transient protection

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Schottky barrier diode JSCJ SD103CWS featuring low reverse capacitance and transient protection

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Model Number :	SD103CWS

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Schottky barrier diode JSCJ SD103CWS featuring low reverse capacitance and transient protection

Product Overview

The SOD-323 SD103AWS-SD103CWS series are Schottky Barrier Diodes designed for applications requiring low forward voltage drop, negligible reverse recovery time, and low reverse capacitance. They feature guard ring construction for transient protection, making them suitable for various electronic circuits.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Package Type: SOD-323
Molding Compound: Green (if solid dot present)

Technical Specifications

Parameter	Symbol	SD103AWS	SD103BWS	SD103CWS	Unit	Conditions
Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage	VRRM / VRWM / VR	40	30	20	V
RMS Reverse Voltage	VR(RMS)	28	21	14	V
Forward Continuous Current	IFM	350			mA	@Ta=25
Non-repetitive Peak Forward Surge Current	IFSM	2.0			A	@t=8.3ms
Power Dissipation	Pd	200			mW	@Ta=25
Thermal Resistance Junction to Ambient	RJA	500			/W
Storage Temperature	TSTG	-55~+150
Junction Temperature	Tj	-40~+125
Reverse breakdown voltage	V(BR)	40	30	20	V	IR=100A
Forward voltage	VF	0.37			V	IF=20mA
Forward voltage	VF		0.60		V	IF=200mA
Reverse current	IRM	5.0			A	VR=30V
Reverse current	IRM			5.0	A	VR=10V
Capacitance between terminals	CT	50			pF	VR=0V,f=1.0MHz
Reverse recovery time	trr	10			ns	IF=IR=200mA, Irr=0.1XIR,RL=100

2410121610_JSCJ-SD103CWS_C77358.pdf

Schottky barrier diode JSCJ SD103CWS featuring low reverse capacitance and transient protection

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