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Triac semiconductor device WEIDA BT137-600E suitable for 8A power control applications and low holding current

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Triac semiconductor device WEIDA BT137-600E suitable for 8A power control applications and low holding current

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Model Number :	BT137-600E

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Triac semiconductor device WEIDA BT137-600E suitable for 8A power control applications and low holding current

Product Overview

The Jiangsu Weida Semiconductor BT137 Series 8A Triacs are designed for middle and small resistance type power load applications. They feature low holding and latching current, making them ideal for various power control scenarios.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Product Series: BT137 Series
Product Type: Triacs
Current Rating: 8A
Revision: 6.0
Year: 2020

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition	Notes
Absolute Maximum Ratings	Tstg	-40~150			Storage junction temperature range
	Tj	-40~125			Operating junction temperature range
	VDRM/VRRM	600/800	V	Tj=25	Repetitive peak off-state/reverse voltage
	IT(RMS)	8	A		RMS on-state current
	ITSM	65	A	Non repetitive surge peak on-state current (full cycle, F=50Hz)
	I2t	21	As	for fusing (tp=10ms)
	dI/dt	50 (--) / 10 ()	A/s	Critical rate of rise of on-state current (IG=2IGT)
	IGM	2	A		Peak gate current
	PG(AV)	0.5	W		Average gate power dissipation
	PGM	5	W		Peak gate power
Electrical Characteristics	IGT	5/10/25/50 (--), 10/25/70/100 ()	mA	VD=12V, RL=33	D, E, F, G variants
	VGT	1.3	V	---
	VGD	0.2 (MIN)	V	VD=VDRM	---
	IH	10/20/40/60 (--), 20/40/70/100 ()	mA	IT=100mA	MAX, IG=1.2IGT
	dV/dt	20/50/100/200	V/s	VD=0.66VDRM, Tj=125	Gate open, MIN
	VTM	1.6	V	ITM=10A, tp=380s, Tj=25	MAX
Static Characteristics	IDRM/IRRM	5 (Tj=25), 0.5 (Tj=125)	A/mA	VDRM= VRRM	MAX
Static Characteristics	Rth(j-c)	1.8 (TO-220B/C), 2.0 (TO-252-4R), 2.8 (TO-220F), 3.0 (TO-263)	/W	junction to case(AC)

2410122027_WEIDA-BT137-600E_C2901156.pdf

Triac semiconductor device WEIDA BT137-600E suitable for 8A power control applications and low holding current

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