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MSKSEMI BT169-MS featuring low reverse forward blocking current ideal for switched mode power supplies

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MSKSEMI BT169-MS featuring low reverse forward blocking current ideal for switched mode power supplies

Product Overview

The BT169-MS is a semiconductor device featuring sensitive gate trigger current, low reverse and forward blocking current, and low holding current. Its glass-passivated surface ensures reliability and uniformity. This component is suitable for applications such as ignition circuits, lighting ballasts, protection circuits, and switched mode power supplies.

Product Attributes

  • Brand: MSKSEMI Semiconductor
  • Package Type: SOT-89

Technical Specifications

ParameterSymbolValueUnitTest Conditions
Repetitive Peak Off-State VoltagesVDRM, VRRM60V
Average On-State CurrentIT(AV)0.5A
RMS on-State CurrentIT(RMS)0.8A
Non-Repetitive Peak On-State CurrentITSM8A
Peak gate currentIGM1.0A
Peak Gate PowerPG(AV)0.1W
Peak Gate VoltagePGM2W
Operating junction temperatureTJ-40~+125
Storage TemperatureTSTG-40~+150
Peak Repetitive Forward or Reverse Blocking CurrentIDRM, IRRM100uAVAK = Rated VDRM or VRRM
Gate Trigger CurrentIGT10 - 200uAVD=12V, IT=0.1A
Gate Trigger VoltageVGT0.8VVD=12V, IT=0.1A
Peak Forward On-State VoltageVTM1.8VIT= 1.0A, IG=50mA
Latch CurrentIL6mAIG=1.2IGT
Holding CurrentIH5mAIT=0.5mA, IG=30mA
Critical Rate of Rise of Off-State VoltagedV/dt10V/sVD=67%VDRM, RGK=1k

Package Mechanical Data (SOT-89)

SymbolDimensions In MillimetersDimensions In Inches
A1.400 - 1.6000.055 - 0.063
b0.320 - 0.5200.013 - 0.020
b10.400 - 0.5800.016 - 0.023
c0.350 - 0.4400.014 - 0.017
D4.400 - 4.6000.173 - 0.181
D1
E2.300 - 2.6000.091 - 0.102
E13.940 - 4.2500.155 - 0.167
e
e1
L0.900 - 1.2000.035 - 0.047
REF.1.550 REF.0.061 REF.
TYP.1.500 TYP.0.060 TYP.
TYP.3.000 TYP.0.118 TYP.

Reel Specification

PKGQTY
SOT-891000

2409302103_MSKSEMI-BT169-MS_C5140031.pdf

Quality MSKSEMI BT169-MS featuring low reverse forward blocking current ideal for switched mode power supplies for sale
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