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Common Cathode Silicon Variable Capacitance Diode Infineon BB814E7801GR1HTSA1 with High Tuning Ratio

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Common Cathode Silicon Variable Capacitance Diode Infineon BB814E7801GR1HTSA1 with High Tuning Ratio

Product Overview

The BB814 is a Silicon Variable Capacitance Diode designed for FM radio tuners with an extended frequency band. It offers a high tuning ratio at low supply voltage, making it ideal for car radio applications. This diode features a monolithic chip with a common cathode configuration for perfect dual diode tracking. Coded capacitance groups and group matching are available. The product is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Type: Silicon Variable Capacitance Diode
  • Package: SOT23
  • Configuration: Common cathode
  • Certifications: Pb-free (RoHS compliant)

Technical Specifications

ParameterSymbolValueUnitNotes
Diode reverse voltageVR18VMaximum Ratings at TA = 25C
Peak reverse voltageVRM20VMaximum Ratings at TA = 25C
Forward currentIF50mAMaximum Ratings at TA = 25C
Operating temperature rangeTop-55 ... 125CMaximum Ratings
Storage temperatureTstg-55 ... 150CMaximum Ratings
Reverse current (VR = 16 V)IR-nATA = 25C
Reverse current (VR = 16 V, TA = 60 C)IR-200 nATA = 60C
Diode capacitance (VR = 2 V, f = 1 MHz)CT43 ... 46.5pFCapacitance groups 1 & 2
Diode capacitance (VR = 8 V, f = 1 MHz)CT19.1 ... 22.7pFCapacitance groups 1 & 2
Capacitance ratio (VR = 2 V, VR = 8 V, f = 1 MHz)CT2/CT82.05 ... 2.25--
Capacitance matching (VR = 2 V, VR = 8 V, f = 1 MHz)CT/CT-3 %Maximum
Series resistance (VR = 2 V, f = 100 MHz)rS-0.18Typical
Q factor (f = 100 MHz, VR = 2 V)Q-200Typical
LS (nH)-1.8-SOT23
Marking-SH1/2*-*For differences see next page

2411220055_Infineon-BB814E7801GR1HTSA1_C3271984.pdf

Quality Common Cathode Silicon Variable Capacitance Diode Infineon BB814E7801GR1HTSA1 with High Tuning Ratio for sale
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