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Silicon Variable Capacitance Diode Infineon BB 914 E6327 Featuring High Figure of Merit for Radio Tuners

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Silicon Variable Capacitance Diode Infineon BB 914 E6327 Featuring High Figure of Merit for Radio Tuners

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Model Number :	BB 914 E6327

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Silicon Variable Capacitance Diode Infineon BB 914 E6327 Featuring High Figure of Merit for Radio Tuners

Product Overview

The BB914 is a Silicon Variable Capacitance Diode designed for FM radio tuners, offering an extended frequency band and high tuning ratio at low supply voltage, making it ideal for car radio applications. This monolithic chip features a common cathode configuration for perfect dual diode tracking, ensuring good linearity in its C-V curve and a high figure of merit. The BB914 is Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon Technologies
Type: Silicon Variable Capacitance Diode
Configuration: Common cathode
Package: SOT23
Certification: Pb-free (RoHS compliant)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Diode reverse voltage	VR	18	V	Maximum Ratings at TA = 25C
Peak reverse voltage (R 5k)	VRM	20	V	Maximum Ratings at TA = 25C
Forward current	IF	50	mA	Maximum Ratings at TA = 25C
Operating temperature range	Top	-55 ... 125	C	Maximum Ratings
Storage temperature	Tstg	-55 ... 150	C	Maximum Ratings
Reverse current	IR	-	nA	VR = 16 V, TA = 25C (max)
Reverse current	IR	-	nA	VR = 16 V, TA = 85C (max)
Diode capacitance	CT	42.5 - 45	pF	VR = 2 V, f = 1 MHz
Diode capacitance	CT	17.6 - 19.75	pF	VR = 8 V, f = 1 MHz
Capacitance ratio	CT2/CT8	2.28 - 2.42	-	VR = 2 V, VR = 8 V, f = 1 MHz
Capacitance matching	CT/CT	- 1.5	%	VR = 2 V, VR = 8 V, f = 1 MHz
Series resistance	rS	- 0.28		VR = 2 V, f = 100 MHz
Inductance	LS	1.8	nH	SOT23 package

2410121845_Infineon-BB-914-E6327_C533697.pdf

Silicon Variable Capacitance Diode Infineon BB 914 E6327 Featuring High Figure of Merit for Radio Tuners

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