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Silicon Variable Capacitance Diode Infineon BB 639 E7904 with High Capacitance Ratio and Uniformity

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Silicon Variable Capacitance Diode Infineon BB 639 E7904 with High Capacitance Ratio and Uniformity

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Model Number :	BB 639 E7904

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Silicon Variable Capacitance Diode Infineon BB 639 E7904 with High Capacitance Ratio and Uniformity

Product Overview

The BB639/BB659 are Silicon Variable Capacitance Diodes designed for tuning extended frequency bands in VHF TV and VTR tuners. These diodes offer a high capacitance ratio, low series inductance, and low series resistance. Their excellent uniformity and matching are achieved through an "in-line" matching assembly procedure. The components are Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Compliance: Pb-free (RoHS compliant)
Assembly Procedure: "in-line" matching

Technical Specifications

Model	Type	Package	Configuration	LS (nH)	Marking
BB639	Diode	SOD323	single	1.8	yellow S
BB659	Diode	SCD80	single	0.6	DE

Parameter	Symbol	Value	Unit	Condition
Diode reverse voltage	VR	30	V	TA = 25C
Peak reverse voltage	VRM	35	V	R 5k, TA = 25C
Forward current	IF	20	mA	TA = 25C
Operating temperature range	Top	-55 ... 150	C
Storage temperature	Tstg	-55 ... 150	C
Reverse current	IR	-	nA	VR = 30 V, TA = 25C
Reverse current	IR	10	nA	VR = 30 V, TA = 85C
Reverse current	IR	200	nA	VR = 30 V, TA = 85C
Diode capacitance	CT	36	pF	VR = 1 V, f = 1 MHz
Diode capacitance	CT	27.7	pF	VR = 1 V, f = 1 MHz
Diode capacitance	CT	38.3	pF	VR = 1 V, f = 1 MHz
Diode capacitance	CT	29.75	pF	VR = 1 V, f = 1 MHz
Diode capacitance	CT	2.5	pF	VR = 2 V, f = 1 MHz
Diode capacitance	CT	2.85	pF	VR = 2 V, f = 1 MHz
Diode capacitance	CT	2.4	pF	VR = 2 V, f = 1 MHz
Diode capacitance	CT	2.6	pF	VR = 2 V, f = 1 MHz
Diode capacitance	CT	40	pF	VR = 25 V, f = 1 MHz
Diode capacitance	CT	31.8	pF	VR = 25 V, f = 1 MHz
Diode capacitance	CT	3.2	pF	VR = 28 V, f = 1 MHz
Diode capacitance	CT	2.9	pF	VR = 28 V, f = 1 MHz
Capacitance ratio	CT1/CT28	13.5	-	VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio	CT1/CT28	14.7	-	VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio	CT2/CT25	9.8	-	VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio	CT2/CT25	10.4	-	VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching	CT/CT	-	%	VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence (BB639)
Capacitance matching	CT/CT	0.3	%	VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequence (BB659)
Capacitance matching	CT/CT	0.4	%	VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence (BB659)
Capacitance matching	CT/CT	2.5	%	VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence (BB659)
Capacitance matching	CT/CT	1	%	VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence (BB659)
Series resistance	rS	-		VR = 5 V, f = 470 MHz
Series resistance	rS	0.65		VR = 5 V, f = 470 MHz
Series resistance	rS	0.7		VR = 5 V, f = 470 MHz

Package Type	Dimensions (mm)	Footprint (mm)
SCD80	1.7 x 1.3 x 0.8 (approx.)	2.5 x 2.5 (approx.)
SOD323	N/A	N/A

Reel Diameter (mm)	Pieces per Reel	Pitch (mm)
180	3,000	2
180	8,000	2
330	10,000	2

2411220045_Infineon-BB-639-E7904_C533691.pdf

Silicon Variable Capacitance Diode Infineon BB 639 E7904 with High Capacitance Ratio and Uniformity

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