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Silicon variable capacitance diode Infineon BB640E7907 with low series inductance and resistance

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Silicon variable capacitance diode Infineon BB640E7907 with low series inductance and resistance

Product Overview

The BB644/BB664 series are silicon variable capacitance diodes designed for VHF TV-tuners. These diodes offer a high capacitance ratio, low series inductance, and low series resistance. Their excellent uniformity and matching are achieved through an "in-line" matching assembly procedure. The components are Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Compliance: Pb-free (RoHS compliant)
  • Assembly: "in-line" matching assembly procedure

Technical Specifications

ModelTypePackageConfigurationLS (nH)Marking
BB644DiodeSOD323single1.8yellow
BB664DiodeSCD80single0.64
BB664-02VDiodeSC79single0.644
ParameterSymbolValueUnit
Maximum Ratings at TA = 25C, unless otherwise specified
Diode reverse voltageVR30V
Peak reverse voltage R 5kVRM35V
Forward currentIF20mA
Operating temperature rangeTop-55 ... 150C
Storage temperatureTstg-55 ... 150C
Electrical Characteristics at TA = 25C, unless otherwise specified
Reverse current VR = 30 VIR-10 nA (max.)
Reverse current VR = 30 V, TA = 85 CIR-100 nA (max.)
Diode capacitance VR = 1 V, f = 1 MHzCT39 ... 44.5pF
Diode capacitance VR = 2 V, f = 1 MHzCT29.4 ... 34.2pF
Diode capacitance VR = 25 V, f = 1 MHzCT2.5 ... 2.85pF
Diode capacitance VR = 28 V, f = 1 MHzCT2.4 ... 2.75pF
Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHzCT1/CT2815 ... 17.8-
Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHzCT2/CT2511 ... 12.6-
Capacitance matching1) VR = 1 ... 28 V, f = 1 MHz, 7 diodes sequenceCT/CT-2 % (max.)
Series resistance VR = 5 V, f = 470 MHzrS-0.6 ... 0.75

1) For details please refer to Application Note 047.


2410301807_Infineon-BB640E7907_C3271891.pdf

Quality Silicon variable capacitance diode Infineon BB640E7907 with low series inductance and resistance for sale
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