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Pb Free Silicon Variable Capacitance Diode Infineon BB 640 E6327 Suitable for VHF TV and VTR Tuners

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Pb Free Silicon Variable Capacitance Diode Infineon BB 640 E6327 Suitable for VHF TV and VTR Tuners

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Model Number :	BB 640 E6327

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Pb Free Silicon Variable Capacitance Diode Infineon BB 640 E6327 Suitable for VHF TV and VTR Tuners

Product Overview

The BB640 is a Silicon Variable Capacitance Diode designed for VHF TV and VTR tuners. It features a Pb-free (RoHS compliant) package, ensuring environmental adherence. This diode offers precise capacitance control across various reverse voltages and is suitable for applications requiring stable performance in tuner circuits.

Product Attributes

Brand: Infineon Technologies
Product Type: Silicon Variable Capacitance Diode
Package Type: SOD323
Marking: red
Compliance: Pb-free (RoHS compliant)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Maximum Ratings (at TA = 25C, unless otherwise specified)
Diode reverse voltage	VR	30	V
Peak reverse voltage	VRM	35	V	(R 5k)
Forward current	IF	20	mA
Operating temperature range	Top	-55 ... 150	C
Storage temperature	Tstg	-55 ... 150	C
Electrical Characteristics (at TA = 25C, unless otherwise specified)
DC Characteristics
Reverse current	IR	-	nA	VR = 30 V, min.
Reverse current	IR	-	nA	VR = 30 V, typ.
Reverse current	IR	10	nA	VR = 30 V, max.
Reverse current	IR	-	nA	VR = 30 V, TA = 85 C, min.
Reverse current	IR	-	nA	VR = 30 V, TA = 85 C, typ.
Reverse current	IR	200	nA	VR = 30 V, TA = 85 C, max.
AC Characteristics
Diode capacitance	CT	62	pF	VR = 1 V, f = 1 MHz, min.
Diode capacitance	CT	69	pF	VR = 1 V, f = 1 MHz, typ.
Diode capacitance	CT	76	pF	VR = 1 V, f = 1 MHz, max.
Diode capacitance	CT	47.5	pF	VR = 2 V, f = 1 MHz, min.
Diode capacitance	CT	54.5	pF	VR = 2 V, f = 1 MHz, typ.
Diode capacitance	CT	61.5	pF	VR = 2 V, f = 1 MHz, max.
Diode capacitance	CT	2.85	pF	VR = 25 V, f = 1 MHz, min.
Diode capacitance	CT	3.28	pF	VR = 25 V, f = 1 MHz, typ.
Diode capacitance	CT	3.7	pF	VR = 25 V, f = 1 MHz, max.
Diode capacitance	CT	2.8	pF	VR = 28 V, f = 1 MHz, min.
Diode capacitance	CT	3.05	pF	VR = 28 V, f = 1 MHz, typ.
Diode capacitance	CT	3.3	pF	VR = 28 V, f = 1 MHz, max.
Capacitance ratio	CT1/CT28	19.5	-	VR = 1 V, VR = 28 V, f = 1 MHz, min.
Capacitance ratio	CT1/CT28	25	-	VR = 1 V, VR = 28 V, f = 1 MHz, max.
Capacitance ratio	CT2/CT25	15	-	VR = 2 V, VR = 25 V, f = 1 MHz, min.
Capacitance ratio	CT2/CT25	16.6	-	VR = 2 V, VR = 25 V, f = 1 MHz, typ.
Capacitance matching	CT/CT	-	%	VR = 1 V, VR = 28 V, f = 1 MHz, typ.
Capacitance matching	CT/CT	2.5	%	VR = 1 V, VR = 28 V, f = 1 MHz, max. (See Application Note 047)
Series resistance	rS	-		CT = 12 pF, f = 100 MHz, typ.
Series resistance	rS	1.15		CT = 12 pF, f = 100 MHz, typ.

2411220050_Infineon-BB-640-E6327_C533692.pdf

Pb Free Silicon Variable Capacitance Diode Infineon BB 640 E6327 Suitable for VHF TV and VTR Tuners

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