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MDD Microdiode Semiconductor BC817-25 NPN transistor designed for performance in general AF circuits

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MDD Microdiode Semiconductor BC817-25 NPN transistor designed for performance in general AF circuits

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Model Number :	BC817-25

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MDD Microdiode Semiconductor BC817-25 NPN transistor designed for performance in general AF circuits

Product Overview

The BC817 is a general-purpose NPN transistor in a SOT-23 plastic-encapsulated package. It is designed for general AF applications and offers high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).

Product Attributes

Brand: microdiode
Package Type: SOT-23
Transistor Type: NPN

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Maximum Ratings	VCBO			50	V
	VCEO			45	V
	VEBO			5	V
	IC			0.5	A
	Ptot	(Ta=25)		300	mW
	Tj			150	OC
	Tstg		-55	+150	OC
Electrical Characteristics	VCBO	IC= 10A, IE=0	50		V
	VCEO	IC= 10mA, IB=0	45		V
	VEBO	IE= 1A, IC=0	5		V
	ICBO	VCB= 45 V , IE=0		0.1	A
	IEBO	VEB=4V, IC=0		0.1	A
	DC Current Gain (hFE)	VCE=1V, IC=100mA	100	600
	DC Current Gain (hFE)	VCE=1V, IC=500mA	40
Collector-emitter saturation voltage	VCE(sat)	IC= 500mA, IB= 50mA		0.7	V
Base-emitter saturation voltage	VBE(sat)	IC= 500mA, IB= 50mA		1.2	V
Base-emitter voltage	VBE	VCE= 1 V, IC= 500mA		1.2	V
Collector capacitance	Cob	VCB=10V ,f=1MHz		10	pF
Transition frequency	fT	VCE= 5 V, IC=10mA f=100MHz	100		MHz
Thermal Resistance	RJA	From Junction To Ambient		417	OC/W

2509111015_MDD-Microdiode-Semiconductor-BC817-25_C2858531.pdf

MDD Microdiode Semiconductor BC817-25 NPN transistor designed for performance in general AF circuits

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