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Semiconductor Transistor High Diode BC807 With SOT23 Package And Complementary BC817 NPN Transistor

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Semiconductor Transistor High Diode BC807 With SOT23 Package And Complementary BC817 NPN Transistor

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Model Number :	BC807

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Semiconductor Transistor High Diode BC807 With SOT23 Package And Complementary BC817 NPN Transistor

Product Overview

The BC807 is a high diode semiconductor transistor in a SOT-23 package. It offers high collector current, high current gain, and low collector-emitter saturation voltage. It is a complementary type to the BC817 (NPN) transistor.

Product Attributes

Brand: High Diode Semiconductor
Package Type: SOT-23
Material: Plastic-Encapsulate Transistors
Complementary Type: BC817 (NPN)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit	Rank	Marking
Collector-Base Voltage	VCBO	IC= -10A, IE=0			-50	V
Collector-Emitter Voltage	VCEO	IC= -10mA, IB=0			-45	V
Emitter-Base Voltage	VEBO	IE= -1A, IC=0			-5	V
Collector Cut-off Current	ICBO	VCB= -45 V , IE=0			0.1	A
Emitter Cut-off Current	IEBO	VEB= -4V, IC=0			0.1	A
DC Current Gain	hFE(1)	VCE= -1V, IC=-100mA	100		600		BC807-16	5A
DC Current Gain	hFE(2)	VCE=-1V, IC=-500mA		40			BC807-25	5B
DC Current Gain	hFE	VCE= -1V, IC=-100mA					BC807-40	5C
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB= 50mA			0.7	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-500mA, IB=-50mA			1.2	V
Transition Frequency	fT	VCE=-5 V, IC=-10mA f=100MHz		100		MHz
Collector Power Dissipation	PC				300	mW
Thermal Resistance Junction To Ambient	RJA			417		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150

2410121455_High-Diode-BC807_C466642.pdf

Semiconductor Transistor High Diode BC807 With SOT23 Package And Complementary BC817 NPN Transistor

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