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Schottky bridge rectifier Comchip CDBHD260-G featuring metal semiconductor junction and low forward voltage for power

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Schottky bridge rectifier Comchip CDBHD260-G featuring metal semiconductor junction and low forward voltage for power

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Model Number :	CDBHD260-G

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Schottky bridge rectifier Comchip CDBHD260-G featuring metal semiconductor junction and low forward voltage for power

Product Overview

Low VF SMD Schottky Bridge Rectifiers featuring metal semiconductor junction with guard ring and silicon epitaxial planar chips. Designed for low voltage, high efficiency inverters, free wheeling, and polarity protection applications. These rectifiers offer very low forward voltage drop and are available in a TO-269AA(MDS) package.

Product Attributes

Brand: Comchip Technology CO., LTD.
Material: Silicon epitaxial planar chips, Metal semiconductor junction
Certifications: RoHS, UL94-V0 rated flame retardant
Package: TO-269AA(MDS)

Technical Specifications

Part Number	Reverse Voltage (VRRM)	Forward Current (IAV)	Forward Voltage (VF)	Reverse Current (IR)	Operating Junction Temperature (C)	Storage Temperature (C)	Peak Forward Surge Current (IFSM)	Thermal Resistance (RJA)	Thermal Resistance (RJL)	Diode Junction Capacitance (CJ)
CDBHD240-G	40V	2.0A	0.70V (VR=VRRM, TJ=25C) / 0.85V (VR=VRRM, TJ=100C)	0.50mA (VR=VRRM, TJ=25C) / 0.5mA (VR=VRRM, TJ=100C)	-55 to +125	-65 to +175	50A (8.3ms single half sine-wave)	75 C/W (Typ.)	20 C/W (Typ.)	150pF (f=1MHz, VR=4V DC)
CDBHD260-G	60V	2.0A	0.70V (VR=VRRM, TJ=25C) / 0.85V (VR=VRRM, TJ=100C)	0.50mA (VR=VRRM, TJ=25C) / 0.5mA (VR=VRRM, TJ=100C)	-55 to +125	-65 to +175	50A (8.3ms single half sine-wave)	75 C/W (Typ.)	20 C/W (Typ.)	150pF (f=1MHz, VR=4V DC)
CDBHD2100-G	100V	2.0A	0.70V (VR=VRRM, TJ=25C) / 0.85V (VR=VRRM, TJ=100C)	0.50mA (VR=VRRM, TJ=25C) / 0.5mA (VR=VRRM, TJ=100C)	-55 to +125	-65 to +175	50A (8.3ms single half sine-wave)	75 C/W (Typ.)	20 C/W (Typ.)	150pF (f=1MHz, VR=4V DC)

2410121513_Comchip-CDBHD260-G_C3012751.pdf

Schottky bridge rectifier Comchip CDBHD260-G featuring metal semiconductor junction and low forward voltage for power

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