| General Description |
| IC | Collector current (DC) | - | - | - | 1.5 | A |
| Ptot | Total power dissipation | Tlead ≤25 °C; see Figure 1 | - | - | 2.1 | W |
| VCESM | Collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| Static Characteristics |
| hFE | DC current gain | IC = 0.5 A; VCE = 2 V; Tj = 25 °C | 8 | 17 | 25 | - |
| hFE | DC current gain | IC = 1 A; VCE = 2 V; Tj = 25 °C | 5 | 9 | 15 | - |
| ICES | Collector-emitter cut-off current | VBE = 0 V; VCE = 700 V | - | - | 1 | mA |
| ICES | Collector-emitter cut-off current | VBE = 0 V; VCE = 700 V; Tj = 100 °C | - | - | 5 | mA |
| ICEO | Collector-emitter cut-off current | VCE = 400 V; IB = 0 A; Tlead = 25 °C | - | - | 0.1 | mA |
| IEBO | Emitter-base cut-off current | VEB = 9 V; IC = 0 A; Tlead = 25 °C | - | - | 1 | mA |
| VCEOsus | Collector-emitter sustaining voltage | IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; see Figure 3; see
Figure 4 | 400 | - | - | V |
| VCEsat | Collector-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C | - | - | 0.5 | V |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 0.25 A; Tlead = 25 °C | - | - | 1 | V |
| VCEsat | Collector-emitter saturation voltage | IC = 1.5 A; IB = 0.5 A; Tlead = 25 °C | - | - | 1.5 | V |
| VBEsat | Base-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C | - | - | 1 | V |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 0.25 A; Tlead = 25 °C | - | - | 1.2 | V |
| VF | Forward voltage | IF = 0.5 A; Tj = 25 °C | - | - | 1.5 | V |
| Dynamic Characteristics |
| ton | Turn-on time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C;
resistive load; see Figure 5; see Figure 6 | - | - | 1 | µs |
| ts | Storage time | IC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C;
inductive load; see Figure 7; see Figure 8 | - | 0.8 | - | µs |
| tf | Fall time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C;
resistive load; see Figure 5; see Figure 6 | - | - | 0.7 | µs |
| tf | Fall time | IC = 0.5 A; IBon = 0.1 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C;
inductive load; see Figure 7; see Figure 8 | - | 0.1 | - | µs |
| Limiting Values |
| VCESM | Collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| VCBO | Collector-base voltage | IE = 0 A | - | - | 700 | V |
| VCEO | Collector-emitter voltage | IB = 0 A | - | - | 400 | V |
| IC | Collector current (DC) | - | - | - | 1.5 | A |
| ICM | Peak collector current | - | - | - | 3 | A |
| IB | Base current (DC) | - | - | - | 0.75 | A |
| IBM | Peak base current | - | - | - | 1.5 | A |
| Ptot | Total power dissipation | Tlead ≤25 °C; see Figure 1 | - | - | 2.1 | W |
| Tstg | Storage temperature | -65 | - | 150 | °C |
| Tj | Junction temperature | - | - | 150 | °C |
| VEBO | Emitter-base voltage | IC = 0 A; I(Emitter) = 10 mA | - | - | 9 | V |
| Thermal Characteristics |
| Rth(j-lead) | Thermal resistance from junction to lead | see Figure 2 | - | - | 60 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; printed-circuit board mounted; lead length = 4 mm | - | 150 | - | K/W |
