Home > Single FETs, MOSFETs >

High cell density complementary MOSFETs HUASHUO HSU3903 designed for power switching and reliability

Product Categories

Single FETs, MOSFETs [3000]
Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

High cell density complementary MOSFETs HUASHUO HSU3903 designed for power switching and reliability

Ask Lasest Price
Model Number :	HSU3903

Add to Cart

Product Details
Company Profile

High cell density complementary MOSFETs HUASHUO HSU3903 designed for power switching and reliability

Product Overview

The HSU3903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density, offering excellent RDSON and gate charge characteristics. These MOSFETs are designed for synchronous buck converter applications and meet RoHS and Green Product requirements. They are 100% EAS guaranteed with full function reliability approval, providing advantages such as super low gate charge and excellent CdV/dt effect decline through advanced high cell density Trench technology.

Product Attributes

Brand: HS-Semi
Certifications: RoHS, Green Product
Technology: Advanced high cell density Trench technology
Guarantees: 100% EAS Guaranteed

Technical Specifications

Model	Parameter	Conditions	Min.	Typ.	Max.	Units
HSU3903 (N-Ch)	VDS	Drain-Source Voltage			30	V
	VGS	Gate-Source Voltage			20	V
	ID@TC=25	Continuous Drain Current, VGS @ 10V			30	A
	ID@TC=100	Continuous Drain Current, VGS @ 10V			18	A
	IDM	Pulsed Drain Current			60	A
	EAS	Single Pulse Avalanche Energy			22	mJ
	IAS	Avalanche Current			21	A
	PD@TC=25	Total Power Dissipation			25	W
	TSTG	Storage Temperature Range		-55		150
	TJ	Operating Junction Temperature Range		-55		150
	RJA	Thermal Resistance Junction-Ambient				62	/W
	RJC	Thermal Resistance Junction-Case				5	/W
	BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30			V
	RDS(ON)	Static Drain-Source On-Resistance	VGS=10V , ID=10A			18	m
	Qg	Total Gate Charge	VDS=20V , VGS=4.5V , ID=12A		7.2		nC
	Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz		572		pF
HSU3903 (P-Ch)	VDS	Drain-Source Voltage			-30	V
	VGS	Gate-Source Voltage			20	V
	ID@TC=25	Continuous Drain Current, VGS @ 10V			-24	A
	ID@TC=100	Continuous Drain Current, VGS @ 10V			-19	A
	IDM	Pulsed Drain Current			-50	A
	EAS	Single Pulse Avalanche Energy			45	mJ
	IAS	Avalanche Current			-30	A
	PD@TC=25	Total Power Dissipation			25	W
	TSTG	Storage Temperature Range		-55		150
	TJ	Operating Junction Temperature Range		-55		150
	RJA	Thermal Resistance Junction-Ambient				62	/W
	RJC	Thermal Resistance Junction-Case				5	/W
	BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-30			V
	RDS(ON)	Static Drain-Source On-Resistance	VGS=-10V , ID=-12A			30	m
	Qg	Total Gate Charge	VDS=-20V , VGS=-4.5V , ID=-12A		9.8		nC
	Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz		930		pF

2410121525_HUASHUO-HSU3903_C508800.pdf

High cell density complementary MOSFETs HUASHUO HSU3903 designed for power switching and reliability

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

Explore more Single FETs, MOSFETs products from this supplier

Find Similar Products By Category:

Measurement & Analysis Instruments

Hot Searches: