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complementary MOSFET HUASHUO HSBA1641 with trench technology and full function reliability approval

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complementary MOSFET HUASHUO HSBA1641 with trench technology and full function reliability approval

Product Overview

The HSBA1641 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDS(ON) and gate charge characteristics. These MOSFETs are designed for synchronous buck converter applications and meet RoHS and Green Product requirements. They are 100% EAS guaranteed with full function reliability approved, offering super low gate charge and excellent CdV/dt effect decline due to advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Certifications: RoHS, Green Product
  • Technology: Advanced high cell density Trench technology
  • Reliability: 100% EAS Guaranteed, Full function reliability approved

Technical Specifications

ModelParameterConditionsMin.Typ.Max.Unit
HSBA1641 (N-Ch)Drain-Source Breakdown Voltage (BVDSS)VGS=0V, ID=250uA40V
BVDSS Temperature CoefficientReference to 25, ID=1mA0.034V/
Static Drain-Source On-Resistance (RDS(ON))VGS=10V, ID=5A1115m
Static Drain-Source On-Resistance (RDS(ON))VGS=4.5V, ID=4A1420m
Gate Threshold Voltage (VGS(th))VGS=VDS, ID=250uA1.01.52.5V
VGS(th) Temperature Coefficient-4.56mV/
Drain-Source Leakage Current (IDSS)VDS=32V, VGS=0V, TJ=251uA
Drain-Source Leakage Current (IDSS)VDS=32V, VGS=0V, TJ=555uA
Gate-Source Leakage Current (IGSS)VGS=20V, VDS=0V100nA
Forward Transconductance (gfs)VDS=5V, ID=5A14S
Gate Resistance (Rg)VDS=0V, VGS=0V, f=1MHz2.6
Total Gate Charge (Qg) (4.5V)VDS=32V, VGS=4.5V, ID=5A10nC
Turn-On Delay Time (Td(on))VDD=20V, VGS=10V, RG=3.3, ID=1A2.8ns
Rise Time (Tr)12.8ns
Fall Time (Tf)6.4ns
HSBA1641 (P-Ch)Drain-Source Breakdown Voltage (BVDSS)VGS=0V, ID=-250uA-40V
BVDSS Temperature CoefficientReference to 25, ID=-1mA-0.02V/
Static Drain-Source On-Resistance (RDS(ON))VGS=-10V, ID=-6A2126m
Static Drain-Source On-Resistance (RDS(ON))VGS=-4.5V, ID=-3A2733m
Gate Threshold Voltage (VGS(th))VGS=VDS, ID=-250uA-1.0-1.7-2.5V
VGS(th) Temperature Coefficient3.72mV/
Drain-Source Leakage Current (IDSS)VDS=-32V, VGS=0V, TJ=251uA
Drain-Source Leakage Current (IDSS)VDS=-32V, VGS=0V, TJ=555uA
Gate-Source Leakage Current (IGSS)VGS=20V, VDS=0V100nA
Forward Transconductance (gfs)VDS=-5V, ID=-6A13S
Gate Resistance (Rg)VDS=0V, VGS=0V, f=1MHz9.1
Total Gate Charge (Qg) (-4.5V)VDS=-20V, VGS=-4.5V, ID=-6A11.5nC
Turn-On Delay Time (Td(on))VDD=-15V, VGS=-10V, RG=3.3, ID=-1A22ns
Rise Time (Tr)15.7ns
Fall Time (Tf)5.5ns
Absolute Maximum RatingsContinuous Drain Current (ID@TC=25)VGS @ 10V30 (N-Ch)-30 (P-Ch)A
Pulsed Drain Current (IDM)59 (N-Ch)-59 (P-Ch)A
Thermal DataTotal Power Dissipation (PD@TC=25)35 (N-Ch)35 (P-Ch)W
Storage Temperature Range (TSTG)-55150
Electrical CharacteristicsContinuous Drain Current (ID)VGS @ 10V30 (N-Ch)21 (N-Ch)-30 (P-Ch)A
Pulsed Drain Current (IDM)59 (N-Ch)-59 (P-Ch)A

2504101957_HUASHUO-HSBA1641_C45385128.pdf
Quality complementary MOSFET HUASHUO HSBA1641 with trench technology and full function reliability approval for sale
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