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Plastic Encapsulated Schottky Diode Chao He SD103AWS with Guard Ring Construction and Low Capacitance

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Plastic Encapsulated Schottky Diode Chao He SD103AWS with Guard Ring Construction and Low Capacitance

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Model Number :	SD103AWS

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Plastic Encapsulated Schottky Diode Chao He SD103AWS with Guard Ring Construction and Low Capacitance

Product Overview

The CHAOHE MICROELECTRONICS CO., LTD. SD103AWS thru SD103CWS series are Schottky barrier diodes encapsulated in a small SOD-323 surface-mounted device (SMD) plastic package. These diodes are designed for general purpose switching applications and are ideally suited for automatic insertion. Key features include a low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low capacitance. They are available in various reverse voltage ratings, making them versatile for a range of electronic designs.

Product Attributes

Brand: CHAOHE MICRO ELECTRONICS CO., LTD.
Package Type: SOD-323
Encapsulation: Plastic
Material: Halogen free
Certifications: UL 94V-0
Construction: Guard Ring for Transient Protection
Mounting: Surface Mount Device (SMD)
Insertion: Ideally Suited for Automatic Insertion

Technical Specifications

Model	Peak Repetitive Peak Reverse Voltage (VRRM)	Working Peak Reverse Voltage (VRWM)	DC Blocking Voltage (VR)	RMS Reverse Voltage (VR(RMS))	Forward Continuous Current (IFM)	Non-repetitive Peak Forward Surge Current (@t=8.3ms, IFSM)	Power Dissipation (Pd)	Reverse Breakdown Voltage (V(BR)R)	Forward Voltage (VF)	Reverse Current (IRM)	Capacitance (CT)	Reverse Recovery Time (trr)
SD103AWS	40 V	30 V	40 V	28 V	350 mA	2.0 A	200 mW	40 V (IR=100A)	0.37 V (IF=20mA) / 0.60 V (IF=200mA)	5.0 A (VR=30V)	50 pF (VR=0V, f=1.0MHz)	10 ns (IF=IR=200mA, Irr=0.1XIR, RL=100)
SD103BWS	30 V	21 V	30 V	21 V	350 mA	2.0 A	200 mW	30 V (IR=100A)	0.37 V (IF=20mA) / 0.60 V (IF=200mA)	5.0 A (VR=20V)	50 pF (VR=0V, f=1.0MHz)	10 ns (IF=IR=200mA, Irr=0.1XIR, RL=100)
SD103CWS	20 V	14 V	20 V	14 V	350 mA	2.0 A	200 mW	20 V (IR=100A)	0.37 V (IF=20mA) / 0.60 V (IF=200mA)	5.0 A (VR=10V)	50 pF (VR=0V, f=1.0MHz)	10 ns (IF=IR=200mA, Irr=0.1XIR, RL=100)

Parameter	Symbol	Min	Nom	Max	Unit
Dimensions	A	0.95	1.0	1.05	mm
	A1	0.0	0.05	0.1	mm
	A2	0.85	0.90	0.95	mm
	A3	0.35	0.40	0.45	mm
	b	0.30	0.35	0.40	mm
	c	0.127	0.131	0.135	mm
	D	1.20	1.25	1.30	mm
Dimensions	E	2.50	2.65	2.80	mm
	E1	1.65	1.70	1.75	mm
	L	0.20	0.30	0.40	mm
Dimensions	L1	0.45	0.65		mm
Angle		0o	3o	8o
Thermal Resistance (Junction to Ambient)	RJA	500			/W
Junction Temperature	Tj	-40		+125
Storage Temperature	Tstg	-55		+150

Packing	Quantity per reel	Reel size	Marking Code
Tape & Reel	3,000 pcs	7 inches	S4 (SD103AWS), S5 (SD103BWS), S6 (SD103CWS)

2509251450_Chao-He-SD103AWS_C51953486.pdf

Plastic Encapsulated Schottky Diode Chao He SD103AWS with Guard Ring Construction and Low Capacitance

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