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Electronic Component PNP Transistor Semiconductor Device Collector Current 05A CBI S8550W

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Electronic Component PNP Transistor Semiconductor Device Collector Current 05A CBI S8550W

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Model Number :	S8550W

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Electronic Component PNP Transistor Semiconductor Device Collector Current 05A CBI S8550W

Product Overview

This PNP transistor, complementary to the S8050, offers a collector current of 0.5A. It is suitable for various electronic applications requiring a PNP semiconductor component. The device is marked as 2TY and comes in a SOT-323 package.

Product Attributes

Marking: 2TY
Package: SOT-323
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO			-40	V
Collector-Emitter Voltage	VCEO			-25	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current - Continuous	IC			-0.5	A
Collector Power Dissipation	PC			0.3	W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC = -100A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-1mA, IB=0	-25		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -100A, IC=0	-5		V
Collector cut-off current	ICBO	VCB= -40V, IE=0		-0.1	A
Collector cut-off current	ICEO	VCE= -20V, IB=0		-0.1	A
Emitter cut-off current	IEBO	VEB= -3V, IC=0		-0.1	A
DC current gain	hFE(1)	VCE= -1V, IC= -50mA	120	400
DC current gain	hFE(2)	VCE= -1V, IC= -500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=-500mA, IB= -50mA		-0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=-500mA, IB= -50mA		-1.2	V
Transition frequency	fT	VCE= -6V, IC= -20mA, f=30MHz		150	MHz

CLASSIFICATION OF hFE(1)
Rank	Range
L	120-200
H	200-350
J	300-400

2410121503_CBI-S8550W_C5362108.pdf

Electronic Component PNP Transistor Semiconductor Device Collector Current 05A CBI S8550W

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