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The 2N7002KDW is a voltage-controlled small signal switch featuring a high-density cell design for low RDS(on). It is rugged, reliable, and offers high saturation current capability with ESD protection. This MOSFET is ideal for load switching in portable devices and DC/DC converters.
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | 2.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS1 | VGS =20V, VDS = 0V | 10 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =200mA | 1.1 | 5.3 | ||
| VGS =10V,ID =500mA | 0.9 | 5 | ||||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Recovered charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s | 30 | nC | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | 30 | pF | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | |||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 10 | ns | ||
| Turn-Off Delay Time | td(off) | 15 | ns | |||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s | 30 | ns | ||
| Gate-Source Breakdown Voltage | BVGSO | Igs=1mA (Open Drain) | 21.5 | 30 | V |
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