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Load Switch MOSFET GL GL5N04 Featuring Low Reverse Transfer Capacitance and High Pulsed Drain Current Capability

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Load Switch MOSFET GL GL5N04 Featuring Low Reverse Transfer Capacitance and High Pulsed Drain Current Capability

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Model Number :	GL5N04

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Load Switch MOSFET GL GL5N04 Featuring Low Reverse Transfer Capacitance and High Pulsed Drain Current Capability

Product Overview

The GL5N04 is a Silicon N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide variety of applications including PWM applications, load switches, and power management. The SOT-23-3L package complies with RoHS standards. Key features include fast switching, low gate charge and Rdson, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.

Product Attributes

Brand: GL Silicon
Manufacturer: Wuxi Guang Lei electronic technology co., LTD
Package Type: SOT-23-3L
Compliance: RoHS standard
Channel Type: N-Channel

Technical Specifications

Symbol	Parameter	Test Conditions	Rating	Units
Absolute Ratings (Tc= 25 unless otherwise specified)
V_DSS	Drain-to-Source Voltage		40	V
I_D	Continuous Drain Current		5	A
I_D	Continuous Drain Current	TC = 70 C	3.8	A
I_DM^a1	Pulsed Drain Current		20	A
V_GS	Gate-to-Source Voltage		±20	V
dv/dt^a3	Peak Diode Recovery dv/dt		5.0	V/ns
P_D	Power Dissipation		1.4	W
T_J,Tstg	Operating Junction and Storage Temperature Range		55 to 150
T_L	Maximum Temperature for Soldering		300
Electrical Characteristics (Tc= 25 unless otherwise specified)
OFF Characteristics
V_DSS	Drain to Source Breakdown Voltage	V_GS=0V, I_D=-250µA	40	V
ΔBVDSS/ΔT_J	Bvdss Temperature Coefficient	I_D=-250uA,Reference25	--	0.1 V/
I_DSS	Drain to Source Leakage Current	V_DS=40,V_GS=0V,T_a=25	--	1 µA
I_DSS	Drain to Source Leakage Current	V_DS=32V,V_GS=0V,T_a=125	--	250 µA
I_GSS(F)	Gate to Source Forward Leakage	V_GS=+20V	--	1 µA
I_GSS(R)	Gate to Source Reverse Leakage	V_GS=-20V	--	-1 µA
ON Characteristics
R_DS(ON)	Drain-to-Source On-Resistance	V_GS=10V,I_D=2.5A	--	30-45 mΩ
R_DS(ON)	Drain-to-Source On-Resistance	V_GS=4.5V,I_D=2.5A	--	40-60 mΩ
V_GS(TH)	Gate Threshold Voltage	V_DS = V_GS, I_D = 250µA	1-2.5	V
Dynamic Characteristics
g_fs	Forward Transconductance	V_DS=15V,I_D=5.0A	10	S
C_iss	Input Capacitance	V_GS=0V,V_DS=10V, f=1.0MHz	--	620 pF
C_oss	Output Capacitance		--	130 pF
C_rss	Reverse Transfer Capacitance		--	50 pF
Resistive Switching Characteristics
t_d(ON)	Turn-on Delay Time	I_D=1.0A,V_DD=15V, V_GS=10V,R_G=5.0Ω	--	7 ns
t_r	Rise Time		--	21 ns
t_d(OFF)	Turn-Off Delay Time		--	27 ns
t_f	Fall Time		--	7 ns
Q_g	Total Gate Charge	I_D=5.0A,V_DD=15V, V_GS=10V	--	10 nC
Q_gs	Gate to Source Charge		--	1.9 nC
Q_gd	Gate to Drain (Miller)Charge		--	2.8 nC
Source-Drain Diode Characteristics
I_S	Continuous Source Current (Body Diode)		--	5.0 A
I_SM	Maximum Pulsed Current (Body Diode)		--	20 A
V_SD	Diode Forward Voltage	I_S=5.0A,V_GS=0V	--	1.5 V
t_rr	Reverse Recovery Time	I_S=5.0A,T_j = 25°C, dI_F/dt=100A/us,V_GS=0V	--	50 ns
Q_rr	Reverse Recovery Charge	Pulse width tp≤380µs, δ≤2%	--	120 nC
R_θJA	Junction-to-Ambient		90	°C/W

2410121333_GL-GL5N04_C2890388.pdf

Load Switch MOSFET GL GL5N04 Featuring Low Reverse Transfer Capacitance and High Pulsed Drain Current Capability

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