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transistor array BORN ULN2803QN ideal for high power buffer applications and inductive load driving

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transistor array BORN ULN2803QN ideal for high power buffer applications and inductive load driving

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Model Number :	ULN2803QN

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transistor array BORN ULN2803QN ideal for high power buffer applications and inductive load driving

Product Overview

The BORN SEMICONDUCTOR ULN2803QN series is a high-voltage, high-current Darlington transistor array designed for driving a wide range of loads. Each array contains seven open-collector common-emitter pairs, with each pair rated at 500mA and capable of 50V outputs. Integrated suppression diodes are included for inductive load driving, and the input/output pin arrangement simplifies board layout. These devices are suitable for applications such as solenoids, relays, DC motors, LED displays, filament lamps, thermal print-heads, and high-power buffers.

Product Attributes

Brand: BORN SEMICONDUCTOR
Series: ULN2803QN
Package: QFN4X4-20L

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector Current (single output)	ICP	-	-	500	mA/ch	(See typical characteristics)
High-Voltage Outputs	VCC	-0.5	-	50	V	Collector to emitter voltage
VCOM voltage	VCOM	-	-	50	V	Voltage of Pin COM
Input voltage	VI	-0.5	-	30	V
Output clamp current	IOK	-	-	500	mA
Total emitter-terminal current	ITE	-2.5	-	-	A
Operating virtual junction temperature	TJ	-	-	150	C
Storage temperature range	TSTG	-65	-	150	C
Power consumption	PD	-	-	1.3	W
Operating Ambient Temperature	TA	-40	-	105	C
On-state input voltage	VI(on)	-	-	2.4 - 3.0	V	VCE = 2 V, IC = 200-300 mA
Collector-emitter saturation voltage	VCE(sat)	-	0.9 - 1.2	1.1 - 1.6	V	II = 250-500 A, IC = 100-350 mA
Collector cutoff current	ICEX	-	-	50 - 100	A	VCE = 50 V, II = 0, TA = 25C/105C
Clamp forward voltage	VF	-	-	2	V	IF = 350 mA
Off-state input current	II(off)	50	65	-	A	VCE= 50 V, IC = 500 A
Input current	II	-	0.93 - 1.35	-	mA	VI = 3.85 V
Clamp reverse current	IR	-	-	50 - 100	A	VR = 50 V, TA = 25C/70C
Input capacitance	Ci	-	15	25	pF	VI = 0, f = 1 MHz
Propagation delay time, low-to-high	tPLH	-	0.25	1	s
Propagation delay time, high-to-low	tPHL	-	0.25	1	s
High-level output voltage after switching	VOH	-	VS20	-	mV	VS = 50 V, IO = 300 mA

QFN4X4-20L Package Dimensions (mm)
Symbol	Min	Typ	Max
A	0.400	0.450	0.500
A1	0.500	0.550	0.600
A2	0.700	0.750	0.800
D	3.900	4.000	4.100
E	3.900	4.000	4.100
D1	2.625	2.650	2.675
E1	2.625	2.650	2.675
k	0.150	-	-
b	0.200	0.250	0.300
e	-	0.500	-
L	0.300	0.400	0.500

2410122023_BORN-ULN2803QN_C7461219.pdf

transistor array BORN ULN2803QN ideal for high power buffer applications and inductive load driving

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